Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers

摘要

The dipole trap model is able to explain the main properties of the apparentmetal-to-insulator transition in gated high mobility Si-inversion layers. Ournumerical calculations are compared with previous analytical ones and theassumptions of the model are discussed carefully. In general we find a similarbehavior but include further details in the calculation. The calculated strongdensity dependence of the resistivity is not yet in full agreement with theexperiment.